Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
ITO-220AB
Series
-
Rds On (Max) @ Id, Vgs
3Ohm @ 1.2A, 10V
Power Dissipation (Max)
38.7W (Tc)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
955 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Base Product Number
TSM4N80
Recommended Products
TSM4NB60CH600V, 4A, SINGLE N-CHANNEL POWERTaiwan Semiconductor Corporation
